Type Designator: FDP8880
Open a command prompt and type rclone config. We will start by creating a 'backblaze' container pointing to our B2 bucket. Select ‘n' for a new remote and name it 'backblaze'. Use the bucket applicationKeyId as the account and the Application Key itself as the key. Backblaze rclone. You can use these with rclone too; you will need to use rclone version 1.43 or later. Follow Backblaze's docs to create an Application Key with the required permission and add the applicationKeyId as the account and the Application Key itself as the key. Note that you must put the applicationKeyId as the account – you can't use the master Account ID. If you try then B2 will return 401 errors.
AON6372 datasheet, AON6372 datasheets, AON6372 pdf, AON6372 circuit: AOSMD - 30V N-Channel MOSFET,alldatasheet, datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Transistor MOSFET Array Dual N-CH 30V 8.1A 8-Pin SOIC T/R. Click image to enlarge. Manufacturer: Infineon. Product Category: Discretes, Transistors, MOSFET Arrays. Avnet Manufacturer Part #: IRL6372TRPBF. Secondary Manufacturer Part #: SP001569038 Compare.
- AON635430V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 83A Low Gate Charge RDS(ON) (at VGS=10V) 9.5. Aon6314.pdf Size:359K aosemi.
- Mounting Type Surface Mount. Input Capacitance (Ciss) @ Vds 1020pF @ 25V.
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 55 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
Maximum Drain Current |Id|: 54 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 22 nC
Maximum Drain-Source On-State Resistance (Rds): 0.0116 Ohm
Package: TO220
FDP8880 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDP8880 Datasheet (PDF)
0.1. fdp8880 fdb8880.pdf Size:696K _fairchild_semi
0May 2008tmMFDP8880 / FDB8880N-Channel PowerTrench MOSFET30V, 54A, 11.6mGeneral DescriptionFeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 14.5m, VGS = 4.5V, ID = 40Aimprove the overall efficiency of DC/DC converters usingeither synchronous or conventional switching PWM rDS(ON) = 11.6m, VGS = 10V, ID = 40Acontrollers. It has been op
0.2. fdp8880.pdf Size:283K _inchange_semiconductor
isc N-Channel MOSFET Transistor FDP8880FEATURESWith TO-220 packagingDrain Source Voltage-: V 30VDSSStatic drain-source on-resistance:RDS(on) 116m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
9.1. fdp8870 f085.pdf Size:337K _fairchild_semi
July 2010FDP8870_F085N-Channel PowerTrench MOSFET30V, 156A, 4.1mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 4.1m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 4.6m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been optimized fo
9.2. fdp8896.pdf Size:470K _fairchild_semi
NMay 2008tmMFDP8896N-Channel PowerTrench MOSFET30V, 92A, 5.9mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 5.9m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 7.0m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been optimized f
9.3. fdp8878.pdf Size:250K _fairchild_semi
November 2005FDP8878N-Channel Logic Level PowerTrench MOSFET 30V, 40A, 15mGeneral Descriptions Features rDS(ON) = 15m, VGS = 10V, ID = 40AThis N-Channel MOSFET has been designed specifically to rDS(ON) = 19m, VGS = 4.5V, ID = 36Aimprove the overall efficiency of DC/DC converters using High performance trench technology for extremely low either synchronous or con
9.4. fdp8874.pdf Size:469K _fairchild_semi
NMay 2008tmMFDP8874N-Channel PowerTrench MOSFET30V, 114A, 5.3mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 5.3m, VGS = 10V, ID = 40Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 6.6m, VGS = 4.5V, ID = 40Aeither synchronous or conventional switching PWMcontrollers. It has been optimized
9.5. fdp8876.pdf Size:308K _fairchild_semi
November 2005FDP8876N-Channel PowerTrench MOSFET 30V, 71A, 8.5mGeneral Descriptions Features rDS(ON) = 8.5m, VGS = 10V, ID = 40AThis N-Channel MOSFET has been designed specifically to rDS(ON) = 10.3m, VGS = 4.5V, ID = 40Aimprove the overall efficiency of DC/DC converters using High performance trench technology for extremely low either synchronous or conventiona
9.6. fdp8860.pdf Size:323K _fairchild_semi
September 2006FDP8860tmN-Channel PowerTrench MOSFET 30V, 80A, 2.5mFeatures General Description Max rDS(on) = 2.5m at VGS = 10V, ID = 80AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either Max rDS(on) = 2.9m at VGS = 4.5V, ID = 80Asynchronous or conventional switching PWM controllers. It has Lo
9.7. fdp8870.pdf Size:463K _fairchild_semi
eMay 2008FDP8870 tmMN-Channel PowerTrench MOSFET30V, 156A, 4.1mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 4.1m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 4.6m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been optimized f
9.8. fdp8896.pdf Size:284K _inchange_semiconductor
isc N-Channel MOSFET Transistor FDP8896FEATURESWith TO-220 packagingDrain Source Voltage-: V 30VDSSStatic drain-source on-resistance:RDS(on) 59m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
9.9. fdp8874.pdf Size:283K _inchange_semiconductor
isc N-Channel MOSFET Transistor FDP8874FEATURESWith TO-220 packagingDrain Source Voltage-: V 30VDSSStatic drain-source on-resistance:RDS(on) 53m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
9.10. fdp8860.pdf Size:284K _inchange_semiconductor
isc N-Channel MOSFET Transistor FDP8860FEATURESWith TO-220 packagingDrain Source Voltage-: V 30VDSSStatic drain-source on-resistance:RDS(on) 2.5m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
9.11. fdp8870.pdf Size:284K _inchange_semiconductor
isc N-Channel MOSFET Transistor FDP8870FEATURESWith TO-220 packagingDrain Source Voltage-: V 30VDSSStatic drain-source on-resistance:RDS(on) 41m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
Datasheet: FDP8870, STM101N, FDP8870_F085, STK900, FDP8874, STK801, FDP8876, STK600, 2N3824, STK400, FDP8896, STK103, FDP8N50NZ, FDPF10N50FT, FDPF10N50UT, FDPF10N60NZ, STM4472.
LIST
Last Update
MOSFET: CEZ3R04 | CEZ3P08 | CES2322 | CEB93A3 | CEF9060N | CEB6086 | CEN2321A | CEN2307A | CEM9288 | CEM6056L | CEM4052 | CEM2192 | CEU25N02 | CED25N02 | CEU20N02 | CED20N02
6372 Mosfet Drive
Opera gx link generator.
